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TPCF8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPCF8001 Notebook PC Applications Portable Equipment Applications * * * * Low drain-source ON resistance: RDS (ON) = 19 m (typ.) High forward transfer admittance: |Yfs| = 8 S (typ.) Low leakage current: IDSS = 10 A (max.) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 4) EAR Tch Tstg Rating 30 30 20 7 28 2.5 0.7 8 3.5 0.25 150 -55~150 Unit V V V A W W mJ A mJ C C 1 2 3 4 JEDEC JEITA TOSHIBA 2-3U1A Weight: 0.011 g (typ.) Drain power dissipation Drain power dissipation Circuit Configuration 8 7 6 5 Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy Channel temperature Storage temperature range Note: For Notes 1 to 5, refer to the next page Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2007-01-16 TPCF8001 Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max. 50.0 178.6 Unit C/W C/W Marking (Note 5) Lot code (month) Lot No. Part No. (or abbreviation code) F2A Product-specific code Lot code (year) A line indicates lead (Pb)-free package or lead (Pb)-free finish. Pin #1 Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25C (initial), L = 0.5 mH, RG = 25 , IAR = 3.5 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: "" on the lower left of the marking indicates Pin 1. 2 2007-01-16 TPCF8001 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge tf toff Qg Qgs1 Qgd Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton VGS 10 V 0V 4.7 ID = 3.5 A VOUT RL = 4.3 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1mA VGS = 4.5 V, ID = 3.5 A VGS = 10 V, ID = 3.5 A VDS = 10 V, ID = 3.5 A Min. 30 15 1.3 4 VDD 24 V, VGS = 10 V, - ID = 7.0 A Typ. 24 19 8 1270 150 190 3.8 9.4 8.4 40 25.4 3.6 6.2 Max. 10 10 2.5 31 23 ns nC pF Unit A A V V m S VDD 15 V - Duty < 1%, tw = 10 s = Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = 7.0 A, VGS = 0 V Min. Typ. Max. 28 -1.2 Unit A V Forward voltage (diode) 3 2007-01-16 TPCF8001 ID - VDS 5 10 4.5 4 3.2 3.5 2.9 3 Common source Ta = 25C Pulse test ID - VDS 10 3.5 4.5 8 10 3.1 3.2 Common source Ta = 25C Pulse test Drain current ID 3 2.8 2 2.7 1 ID (A) (A) 6 3 2.9 Drain current 4 2.8 2.7 2 2.6 VGS = 2.5V 2.6 VGS = 2.5 V 1 2 3 4 5 0 0 0.2 0.4 0.6 0.8 1.0 0 0 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 10 Common source 8 0.5 VDS - VGS Common source Ta = 25 0.4 Pulse test (A) Drain current ID VDS Drain-source voltage 0.3 0.2 Pulse test 6 4 (V) VDS = 10 V ID = 7 A 2 100 Ta = -55C 25 0.1 1.75 3.5 0 0 1 2 3 4 5 0 0 2 4 6 8 10 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Yfs - ID 100 RDS (ON) - ID 1000 Common source Ta = 25C Pulse test 100 4.5 Forward transfer admittance Yfs (S) Common source VDS = 10 V Pulse test Ta = -55C 10 100 25 Drain-source ON resistance RDS (ON) (m) 1 10 VGS = 10 V 0.1 0.1 1 10 100 1 0.1 Drain current ID (A) Drain current ID (A) 1 10 100 4 2007-01-16 TPCF8001 RDS (ON) - Ta 50 Common source 40 ID = 7A,3.5A,1.75A 30 VGS = 4.5 V Pulse test 100 Common source Ta = 25C Pulse test IDR - VDS Drain reverse current IDR (A) Drain-source ON resistance RDS (ON) ( m) 10 10 4.5 20 VGS = 10 V 10 ID = 7A,3.5A,1.75A 2 1 VGS = 0 V 0 -80 -40 0 40 80 120 160 1 0 -0.4 -0.8 -1.2 -1.6 -2 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 10000 4 Vth - Ta Ciss Vth (V) Gate threshold voltage (pF) 1000 Coss 100 Crss 3 Capacitance C 2 10 Common source VGS = 0 V f = 1 MHz Ta = 25C Common source 1 VDS = 10 V ID = 1 mA Pulse test 0 -80 -40 0 40 80 120 160 1 0.1 1 10 100 Drain-source voltage VDS (V) Ambient temperature Ta (C) PD - Ta 3 (1) t = 5 s (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) 40 Dynamic input/output characteristics 16 Drain power dissipation PD (W) VDS 30 VDS 6 20 Common source VGS 10 ID = 7 A Ta = 25C Pulse test 12 VDD = 24 V 12 2 Drain-source voltage 1.5 (1) DC 1 (2) t = 5 s 0.5 (2) DC 8 4 0 0 40 80 120 160 0 0 8 16 24 32 0 40 Ambient temperature Ta (C) Total gate charge Qg (nC) 5 2007-01-16 Gate-source voltage VGS (V) 2.5 (V) TPCF8001 rth - tw 1000 Device mounted on a glass-epoxy board (b) (Note 2b) 100 Transient thermal impedance rth (C/W) Device mounted on a glass-epoxy board (a) (Note 2a) 10 1 0.1 1m 10 m 100 m 1 10 100 1000 Pulse width tw (s) Safe operating area 100 ID max (pulse)* (A) 10 1 ms* Drain current ID 10 ms* 1 * Single pulse Ta = 25C Curves must be derated linearly with increase in temperature. VDSS max 10 100 0.1 0.1 1 Drain-source voltage VDS (V) 6 2007-01-16 TPCF8001 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2007-01-16 |
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